Sulphur passivated GaAs investigation using high resolution X-ray diffractometry

Konstantin M Pavlov; Ian Jamieson; Greg Jakovidis; Anatoly P Petrakov; Vasily I Punegov

doi:10.1142/S0218625X03005219

Sulphur passivated GaAs investigation using high resolution X-ray diffractometry

Konstantin M Pavlov
, Ian Jamieson
, Greg Jakovidis
, Anatoly P Petrakov
, Vasily I Punegov

School of Science & Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of a MoS₂ layer on a GaAs(111) substrate produces a highly strained interface layer, which relaxes via a series of dislocations. Using high-resolution X-ray diffractometry in the triple-axis scheme we investigated this interfacial layer, which results from dipping an epi-ready GaAs wafer in ammonium sulphide, followed by deposition of an RF-sputtered MoS₂ layer. The dislocation density revealed from the measurements is of the 10⁶ cm⁻². This suggests that a high efficiency (~20%) MoS₂/GaAs heterojunction photovoltaic devices are feasible.

Original language	English
Pages (from-to)	533-536
Journal	Surface Review and Letters
Volume	10
Issue number	2-3
DOIs	https://doi.org/10.1142/S0218625X03005219
Publication status	Published - 2003

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Keywords

Surfaces and Structural Properties of Condensed Matter
Radiology and Organ Imaging

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10.1142/S0218625X03005219

https://hdl.handle.net/1959.11/3475

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title = "Sulphur passivated GaAs investigation using high resolution X-ray diffractometry",

abstract = "The growth of a MoS₂ layer on a GaAs(111) substrate produces a highly strained interface layer, which relaxes via a series of dislocations. Using high-resolution X-ray diffractometry in the triple-axis scheme we investigated this interfacial layer, which results from dipping an epi-ready GaAs wafer in ammonium sulphide, followed by deposition of an RF-sputtered MoS₂ layer. The dislocation density revealed from the measurements is of the 10⁶ cm⁻². This suggests that a high efficiency (\textasciitilde{}20\%) MoS₂/GaAs heterojunction photovoltaic devices are feasible.",

keywords = "Surfaces and Structural Properties of Condensed Matter, Radiology and Organ Imaging",

author = "Pavlov, \{Konstantin M\} and Ian Jamieson and Greg Jakovidis and Petrakov, \{Anatoly P\} and Punegov, \{Vasily I\}",

year = "2003",

doi = "10.1142/S0218625X03005219",

language = "English",

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pages = "533--536",

journal = "Surface Review and Letters",

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T1 - Sulphur passivated GaAs investigation using high resolution X-ray diffractometry

AU - Pavlov, Konstantin M

AU - Jamieson, Ian

AU - Jakovidis, Greg

AU - Petrakov, Anatoly P

AU - Punegov, Vasily I

PY - 2003

Y1 - 2003

N2 - The growth of a MoS₂ layer on a GaAs(111) substrate produces a highly strained interface layer, which relaxes via a series of dislocations. Using high-resolution X-ray diffractometry in the triple-axis scheme we investigated this interfacial layer, which results from dipping an epi-ready GaAs wafer in ammonium sulphide, followed by deposition of an RF-sputtered MoS₂ layer. The dislocation density revealed from the measurements is of the 10⁶ cm⁻². This suggests that a high efficiency (~20%) MoS₂/GaAs heterojunction photovoltaic devices are feasible.

AB - The growth of a MoS₂ layer on a GaAs(111) substrate produces a highly strained interface layer, which relaxes via a series of dislocations. Using high-resolution X-ray diffractometry in the triple-axis scheme we investigated this interfacial layer, which results from dipping an epi-ready GaAs wafer in ammonium sulphide, followed by deposition of an RF-sputtered MoS₂ layer. The dislocation density revealed from the measurements is of the 10⁶ cm⁻². This suggests that a high efficiency (~20%) MoS₂/GaAs heterojunction photovoltaic devices are feasible.

KW - Surfaces and Structural Properties of Condensed Matter

KW - Radiology and Organ Imaging

U2 - 10.1142/S0218625X03005219

DO - 10.1142/S0218625X03005219

M3 - Article

SN - 0218-625X

VL - 10

SP - 533

EP - 536

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 2-3

ER -

Sulphur passivated GaAs investigation using high resolution X-ray diffractometry

Abstract

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