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Designing two-dimensional dodecagonal boron nitride

  • Hajime Suzuki
  • , Itsuki Miyazato
  • , Tanveer Hussain
  • , Fatih Ersan
  • , Satoshi Maeda
  • , Keisuke Takahashi

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Two-dimensional dodecagonal boron nitride is designed via first principles calculations. Calculations unveil that the proposed two-dimensional dodecagonal boron nitride is energetically stable and less dense than what is observed with hexagonal and octagonal configurations of two-dimensional boron nitride. Furthermore, it is found that modifying the atomic configuration of two-dimensional boron nitride can tune the band structure. In particular, a direct bandgap of 5.2 eV is observed for two-dimensional dodecagonal boron nitride while a direct bandgap of 5.79 eV and an indirect bandgap of 5.20 eV are observed for the hexagonal and octagonal configurations, respectively. Thus, tailoring atomic configurations demonstrates the possibility to tune the electric band structures of two-dimensional materials.

Original languageEnglish
Pages (from-to)471-474
JournalCrystEngComm
Volume24
Issue number3
Early online date8 Dec 2021
DOIs
Publication statusPublished - 21 Jan 2022

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